Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type ,As-doped, 1 side polished, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa50D05C Aluminum Oxide Substrates Al2O3 Resistivities (ohm-cm): 0

Resistivities (ohm-cm):                       0

Lead-exposed length: 19mm

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Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type ,As-doped, 1 side polished, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa50D05C Aluminum Oxide Substrates Al2O3 Resistivities (ohm-cm): 0Thermal oxide Layer Research Grade, about 80 % useful area SiO2 layer on 2" Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index: 1. 455 Silicon Wafer Specifications: Conductive type: N type As doped Resistivity: 0. 001 0. 005 ohm cm Size: 50. 8 diameter + 0. 5 mm x 0. 50 + 0. 025 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related Products Thin Films A Z Crystal wafer A Z Plasma