Electrolyte-Gated Transistor PEC H-Cell - Electrolyte-Gated Transistor Photo-electrochemical H-Cell O-Ring Resistivity: >1000 ohm-cm

Resistivity:                  >1000 ohm-cm

This electrode is typically used with low volume (1-2 mL) electrochemical cells (e

Polish:         Two sides EPI polished by CMP technology with minimum sub-surface damage

the die and pushing rod may be broken

Material Information Materials: Silicone

Electrolyte-Gated Transistor PEC H-Cell - Electrolyte-Gated Transistor Photo-electrochemical H-Cell O-Ring Resistivity: >1000 ohm-cmThis is a horizontally mounted, double compartment photo electrochemical H Cell designed to measure characteristics of the electrolyte gated (or solution gated) transistors with photo sensitive channel material, using liquid or gel electrolyte in stationary conditions. The sample can be irradiated vertically and horizontally. Measured transistor sample can be fabricated on a rigid or flexible flat substrate (not included in the setup) with conducting