MF138800 - SEMI MF1388 - Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors Revision:SEMI MF1388-0707 (Reapproved 1023) - Current The purpose of this Document
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Description
The purpose of this Document is to establish basic physical dimensions for the carriers intended to be used to transport and store 450 mm wafers
This Specification is intended to address a short-term need for handling wafers
No recommendations are given regarding the test instrumentation to be used
Establishing
the pattern of measurement sites
MF138800 - SEMI MF1388 - Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors Revision:SEMI MF1388-0707 (Reapproved 1023) - Current The purpose of this DocumentThis Test Method covers the measurement of generation lifetime and generation velocity of silicon wafers. The measurement requires the fabrication of a guard ring MOS capacitor (refer to Figure 1). This Test Method is therefore destructive to the silicon wafer. This test may also be applied to semiconductor materials other than silicon and to insulators other than silicon dioxide, but the details of capacitor fabrication and the analyses and
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