E03400 - SEMI E34 - マスフローデバイス返還のためのガイドライン StdPbc-0212 This method is not suitable

This method is not suitable for direct sampling from high pressure cylinders at pressures above 8 × 105 Pa (8 atmospheres)

These mounting requirements may be used in other tools used to fabricate or measure EUV masks

Nanotopography on a wafer surface prior to CMP processes can result in variations in post-CMP dielectric thickness with potential negative consequences for circuit performance and yield

particularly in welded components or tubing exposed to corrosive gases with moisture present

6-95 (first published)

E03400 - SEMI E34 - マスフローデバイス返還のためのガイドライン StdPbc-0212 This method is not suitableNOTICE: This translation is a REFERENCE COPY ONLY. If differences should exist between the English version and a translation in any other language, the English version is the official and authoritative version. SEMI SEMI Referenced SEMI Standards None.