M05100 - SEMI M51 - Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity StdTpc-Silicon Materials & Process Control previously published July 2008

previously published July 2008

FPD用ガラス基板のベンダーおよび，あるいは購入者に使用される。

SEMI MF533-0310 (technical revision)

suppliers responded by introducing products with improved analytical characterization

which may be integrated circuit (IC) wafers and devices

M05100 - SEMI M51 - Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity StdTpc-Silicon Materials & Process Control previously published July 2008This Standard was technically approved by the global Silicon Wafer Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on August 30, 2012. Available at www. semiviews. org and www. semi. org in October 2012; originally published July 2002; previously published March 2003. NOTICE: This Document was completely rewritten in 2012. This Test Method describes procedures for characterizing silicon